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FDL100N50F N-Channel MOSFET
FDL100N50F
N-Channel MOSFET,FRFET
500V, 100A, 0.055 Features
* RDS(on) = 0.043 ( Typ.)@ VGS = 10V, ID = 50A * Low gate charge ( Typ. 238nC) * Low Crss ( Typ. 64pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS Compliant
UniFETTM
May 2009
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G
TO-264
GDS
FDL Series
o
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDL100N50F 500 30 100 60 400 5000 100 73.5 20 2500 20 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Min. 0.1 Max. 0.05 30
o
Units C/W
(c)2009 Fairchild Semiconductor Corporation FDL100N50F Rev. A
1
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FDL100N50F N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FDL100N50F Device FDL100N50F Package TO-264 Reel Size Tape Width Quantity 30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to VDS = 400V, TC = 125oC VGS = 30V, VDS = 0V VDS = 500V, VGS = 0V 25oC 500 0.5 10 100 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 50A VDS = 20V, ID = 50A
(Note 4)
3.0 -
0.043 95
5.0 0.055 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V f = 1MHz VDD = 400V, ID = 50A VGS = 10V 12000 1700 64 238 74 95 pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 50A RG = 4.7 63 186 202 105 ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 100A VGS = 0V, ISD = 100A dIF/dt = 100A/s 250 1.5 100 400 1.5 A A V ns nC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 100A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 100A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDL100N50F Rev. A
2
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FDL100N50F N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
300 100
ID, Drain Current[A]
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V
Figure 2. Transfer Characteristics
400
100
ID, Drain Current[A]
150 C 25 C
o o
10
10
-55 C *Notes: 1. VDS = 20V 2. 250s Pulse Test
o
1 0.5 0.1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
1 VDS, Drain-Source Voltage[V]
10
1
4
6 8 VGS, Gate-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.07
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
300
RDS(ON) [], Drain-Source On-Resistance
0.06
IS, Reverse Drain Current [A]
100
150 C
o
0.05
VGS = 10V VGS = 20V
10
25 C
o
0.04
0.03
*Note: TC = 25 C
o
*Notes: 1. VGS = 0V
0
50
100 150 ID, Drain Current [A]
200
250
1 0.0
2. 250s Pulse Test
0.5 1.0 VSD, Body Diode Forward Voltage [V]
1.5
Figure 5. Capacitance Characteristics
30000 25000
Coss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 100V VDS = 250V VDS = 400V
8
Capacitances [pF]
20000 15000 10000
Crss Ciss
*Note: 1. VGS = 0V 2. f = 1MHz
6
4
5000 0 -1 10
2
*Note: ID = 50A
1 10 VDS, Drain-Source Voltage [V]
30
0
0
50 100 150 200 Qg, Total Gate Charge [nC]
250
FDL100N50F Rev. A
3
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FDL100N50F N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100
*Notes: 1. VGS = 10V 2. ID = 50A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 1mA
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
1000
100s 1ms 10ms 30s
Figure 10. Maximum Drain Current vs. Case Temperature
120 100 ID, Drain Current [A] 80 60 40 20 0 25
ID, Drain Current [A]
100
DC
10
Operation in This Area is Limited by R DS(on) *Notes:
1
0.1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
0.01
1
10 100 VDS, Drain-Source Voltage [V]
1000
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
0.1
Thermal Response [ZJC]
0.5
0.01
0.2 0.1 0.05 0.02 0.01 Single pulse
PDM t1 t2
o
0.001
*Notes: 1. ZJC(t) = 0.05 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.0001 -5 10
10
-4
10 10 Rectangular Pulse Duration [sec]
-3
-2
10
-1
1
FDL100N50F Rev. A
4
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FDL100N50F N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDL100N50F Rev. A
5
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FDL100N50F N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lta g e D r o p
FDL100N50F Rev. A
6
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FDL100N50F N-Channel MOSFET
Mechanical Dimensions
Dimensions in Millimeters
FDL100N50F Rev. A 7 www.fairchildsemi.com
FDL100N50F MOSFET
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
FDL100N50F Rev. A
8
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